Improve performance and radiation resistance of transistors

Daulet Tuyakbayev, Sabri Kocer

Abstract


At present, the problem of increasing performance and radiation resistance of transistors has been given much attention as electronic equipment of spacecraft, including satellites, is exposed to various radiation emissions, such as the Earth's radiation belts, cosmic and galactic rays.


Keywords


radiation effects, bipolar transistors, lifetime, recombination component, electron irradiation, resorption time.

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